A Control Circuit For Diode-based RF Circuits
We are willing to offer the technology to design a Driver circuit for stepwise temperature invariant performance of diode-based RF circuits such as p-i-n and Schottky diode-based attenuator, phase shifter, linearizer etc.
Sector: Electrical engineering
Country: India
Area of Application: • Electronically controlled RF attenuators for various RF/Microwave instruments. • Electronically controlled RF phase shifters for RF/Microwave instrument and digital beam forming networks. • Gain control of RF/Microwave amplifiers for on-board and ground based instrument. • RF Linearisers for TWTAs, SSPAs
Keywords: Control Circuit, Diode, RF
Advantages: • The driver circuit will provide bias to the RF diodes to provide temperature compensated RF performance without using any temperature sensors. • No temperature sensor is required, since properties of the diodes themselves are used to achieve the temperature compensation performance. • The temperature controlled bias voltage/current generated according to the junction temperature of the RF diodes themselves, thus any temperature gradient will not affect the temperature compensation. • Temperature changes induced by RF energy dissipated within the diodes are also compensated. • No trial and error method is involved to optimize the circuit performance
Environmental aspects: Not Applicable
Development Status:
Legal Protection: Patent
Technical specifications:
Transfer Terms: Technology Licensing
Target Countries:
Estimated cost (US$):
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Contact Person: Space Applications Centre (ISRO)
Address: 33 22 / TTID / PPG, SPACE APPLICATIONS CENTRE (ISRO), JODHPUR TEKRA
City: AHMEDABAD
Country: India
Zip/Pin Code: 380 015
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